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Highlights
Increase in Temperature enhances crystallinity of tin disulfide thin films.
Higher substrate temperature favors morphology and topology and results in more homogenious surface.
With increase in substrate temperature and grain size, absorption edge of SnS2 thin films shifts towards higher wave lengths which leads to reduction in Band gap.
Crystalline growth due to increase in substrate temperature leads to resistivity drop, which could be because of defect eliminations and less electron scattering.