Iranian Journal of Materials Science and Engineering
فصلنامه علم و مهندسی مواد ایران
IJMSE
Engineering & Technology
http://ijmse.iust.ac.ir
18
agent2
1735-0808
2383-3882
en
jalali
1397
12
1
gregorian
2019
3
1
16
1
online
1
fulltext
en
Structural and Electric Properties of the Ru0.9M0.1Sr2GdCu2O8 System with M = Zr, Mo, and Mn
گروه سرامیک
Ceramic Materials and Engineering
Research Paper
Research Paper
<div style="text-align: justify;">The superconducting properties of the <em>RuSr<sub>2</sub>GdCu<sub>2</sub>O<sub>8</sub></em> ceramic system depend strongly on the synthesis conditions and the ionic substitutions. In this work, we studied the structural and electrical properties of the <em>Ru</em><sub>0.9</sub><em>M</em><sub>0.1</sub><em>Sr</em><sub>2</sub><em>GdCu</em><sub>2</sub><em>O</em><sub>8</sub> system, with <em>M</em> = <em>Zr</em>, <em>Mo</em>, and <em>Mn</em>. The samples were prepared by solid-state reaction at ambient pressure in air, using temperatures between 980 °C and 1020 °C. X-ray powder diffraction patterns indicate that all samples crystallize in a tetragonal symmetry (S.G. P4/mmm, No. 123). The structural data of each sample was refined by the Rietveld method, showing that the <em>Cu-O</em> (1) and <em>Ru-O</em> (1) bond lengths vary with the substituted ionic radii of <em>Zr</em>, <em>Mo</em>, and <em>Mn</em> ions. Electrical resistance measurements indicate that the samples annealed in flowing oxygen at 1050 °C and 1055 °C for 5 days exhibit a semiconductor like behavior for <em>M</em> = <em>Mo</em> and <em>Mn</em>, whereas the samples with <em>M </em>= <em>Zr </em>and <em>Ru</em> show superconducting behavior. <br>
</div>
Rutheno-cuprates, XRD, Electric resistivity
61
67
http://ijmse.iust.ac.ir/browse.php?a_code=A-10-1741-1&slc_lang=en&sid=1
M.
Abatal
mabatal@pampano.unacar.mx
1800319475328460010401
1800319475328460010401
Yes
Facultad de Ingeniería, Universidad Autónoma del Carmen, Av. Central S/N Esq. C. P. 24115, Cd del Carmen, Campeche, México
A.
Gonzalez-Parada
gonzaleza@ugto.mx
1800319475328460010402
1800319475328460010402
No
University of Guanajuato, 37000 León, México
A.
Quiroz
adquiroz@hotmail.com
1800319475328460010403
1800319475328460010403
No
Facultad de Ingeniería, Universidad Autónoma del Carmen, Av. Central S/N Esq. C. P. 24115, Cd del Carmen, Campeche, México
S. E.
Diaz-Mendez
smendez@pampano.unacar.mx
1800319475328460010404
1800319475328460010404
No
Facultad de Ingeniería, Universidad Autónoma del Carmen, Av. Central S/N Esq. C. P. 24115, Cd del Carmen, Campeche, México
H.
Alazki
halazki@pampano.unacar.mx
1800319475328460010405
1800319475328460010405
No
Facultad de Ingeniería, Universidad Autónoma del Carmen, Av. Central S/N Esq. C. P. 24115, Cd del Carmen, Campeche, México
V.
García-Vázquez
lema@ifuap.buap.mx
1800319475328460010406
1800319475328460010406
No
Instituto de Física Luis Rivera Terrazas, Benemérita Universidad Autónoma de Puebla, Puebla, 72570, México
E.
Chavira
echavira@unam.mx
1800319475328460010407
1800319475328460010407
No
Instituto de Investigaciones en Materiales, UNAM, AP 70-360 México, D. F., 04510 México