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A. Razaghian, T. Chandra2,
Volume 4, Issue 1 (6-2007)

Abstract: Static recrystallization (SRX) behavior of a composite based 7075 Aluminum alloy reinforced with SiC particles was studied during annealing the deformed samples at high temperatures. The results showed an absence of SRX in the samples annealed after hot working at the same deformation temperature, however, a rise in annealing temperature of 100-1500 􀁱C above that the deformation temperature led to full recrystallization. This can be ascribed to the relatively moderate dynamic recovery and the presence of dispersions which stabilize the substructure. Particle stimulated nucleation (PSN) had a significant effect on the grain size in deformed samples at low temperature, but no PSN was observed in samples strained at high temperatures. The possible cause might be that at high temperature the dislocations can be annihilated by climb process around the particles together with the absence of deformation zone for nucleating the recrystallization.
M. Nouri, P. Alizadeh, M. Tavoosi,
Volume 14, Issue 3 (9-2017)

In this study, the crystallization behavior of a 65GeO2-15PbO-10MgF2-10MgO glass (prepared by the conventional melt quenching technique) has been investigated. The microstructure and crystallization behaviors of this glass were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), non-isothermal differential thermal analysis (DTA) and Fourier transform infrared spectroscopy (FTIR). The results demonstrated that a fully glassy phase can successfully be prepared by the conventional melt quenching technique exhibiting one-stage crystallization on heating, i.e., the glassy phase transforms into crystalline MgGeO3 and Pb5GeO7 phases. The activation energy for the crystallization, evaluated from the Kissinger equation, was approximately 202±5 kJ/mole using the peak temperature of the exothermic reaction. The Avrami exponent or reaction order, n, indicates the nucleation rate in this glass to increase with time and the crystallization to be governed by a three-dimensional interface-controlled growth.

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